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Bulletin I25183 rev. B 03/94
ST103S SERIES
INVERTER GRADE THYRISTORS Stud Version
Features
All diffused design Center amplifying gate Guaranteed high dv/dt Guaranteed high di/dt High surge current capability Low thermal impedance High speed performance
105A
Typical Applications
Inverters Choppers Induction heating All types of force-commutated converters
Major Ratings and Characteristics
Parameters
IT(AV) @ TC IT(RMS) ITSM @ 50Hz @ 60Hz I2t @ 50Hz @ 60Hz V DRM/V RRM tq range TJ
ST103S
105 85 165 3000 3150 45 41 400 to 800 10 to 25 - 40 to 125
Units
A C A A A KA2s KA2s V s C
case style TO-209AC (TO-94)
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1
ST103S Series
Bulletin I25183 rev. B 03/94
ELECTRICAL SPECIFICATIONS Voltage Ratings
Voltage Type number Code VDRM /VRRM , maximum repetitive peak voltage V
ST103S 04 08 400 800
VRSM , maximum non-repetitive peak voltage V
500 900
I DRM /IRRM max.
@ TJ = TJ max.
mA
30
Current Carrying Capability
Frequency
180oel 50Hz 400Hz 1000Hz 2500Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current di/dt Case temperature Equivalent values for RC circuit 280 310 320 340 50 VDRM 50 60
ITM 180 el 180 200 200 210 50 50 85 440 470 480 490 50 VDRM 60
o
ITM 100s 330 300 310 320 50 85 4730 2500 1530 840 50 V DRM 60
ITM
Units
3630 1850 1090 580 50 85 V A/s C A
22 / 0.15F
22 / 0.15F
22 / 0.15F
On-state Conduction
Parameter
IT(AV) Max. average on-state current @ Case temperature IT(RMS) Max. RMS on-state current ITSM Max. peak, one half cycle, non-repetitive surge current
ST103S
105 85 165 3000 3150 2530 2650
Units
A C
Conditions
180 conduction, half sine wave DC @ 76C case temperature t = 10ms No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max
A
t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms
I 2t
Maximum I2t for fusing
45 41 32 29 KA2s
t = 10ms t = 8.3ms
I 2 t
Maximum I2t for fusing
450
KA2 s
t = 0.1 to 10ms, no voltage reapplied
2
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ST103S Series
Bulletin I25183 rev. B 03/94
On-state Conduction
Parameter
V TM Max. peak on-state voltage
ST103S
1.73 1.32 1.35 1.40
Units
Conditions
ITM= 300A, TJ = TJ max, tp = 10ms sine wave pulse
V T(TO)1 Low level value of threshold voltage V T(TO)2 High level value of threshold voltage r
t1
V
(16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x x IT(AV)), TJ = TJ max. (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x x IT(AV)), TJ = TJ max.
Low level value of forward slope resistance
m 1.30 600 1000 mA
r t2 IH IL
High level value of forward slope resistance Maximum holding current Typical latching current
T J = 25C, I T > 30A T J = 25C, VA = 12V, Ra = 6, I G = 1A
Switching
Parameter
di/dt Max. non-repetitive rate of rise of turned-on current t
d
ST103S
1000 0.80 Min 10 Max 25
Units
A/s
Conditions
TJ = TJ max, VDRM = rated VDRM ITM = 2 x di/dt TJ= 25C, VDM = rated VDRM, ITM = 50A DC, tp= 1s Resistive load, Gate pulse: 10V, 5 source TJ = TJ max, ITM = 100A, commutating di/dt = 10A/s VR = 50V, tp = 200s, dv/dt: see table in device code
Typical delay time
s
tq
Max. turn-off time
Blocking
Parameter
dv/dt IRRM IDRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current
ST103S
500 30
Units
V/s mA
Conditions
TJ = TJ max., linear to 80% V DRM, higher value available on request TJ = TJ max, rated V DRM/V RRM applied
Triggering
Parameter
PGM Maximum peak gate power
ST103S
40 5 5 20
Units
W A
Conditions
TJ = TJ max, f = 50Hz, d% = 50 TJ = TJ max, tp 5ms
PG(AV) Maximum average gate power IGM +VGM -V GM IGT VGT IGD VGD Max. peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage Max. DC gate current required to trigger Max. DC gate voltage required to trigger Max DC gate current not to trigger Max. DC gate voltage not to trigger
V 5 200 3 20 0.25 mA
T J = TJ max, tp 5ms
T J = 25C, V A = 12V, Ra = 6 V mA V T J = TJ max, rated VDRM applied
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ST103S Series
Bulletin I25183 rev. B 03/94
Thermal and Mechanical Specifications
Parameter
TJ T
stg
ST103S
-40 to 125 -40 to 150 0.195 0.08 15.5 (137) 14 (120)
Units
C
Conditions
Max. junction operating temperature range Max. storage temperature range Max. thermal resistance, junction to case Max. thermal resistance, case to heatsink Mounting torque, 10%
RthJC RthCS T
DC operation K/W Nm (Ibf-in) Nm (Ibf-in) g See Outline Table Non lubricated threads Lubricated threads Mounting surface, smooth, flat and greased
wt
Approximate weight Case style
130
TO-209AC (TO-94)
RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Conduction angle
180 120 90 60 30
Sinusoidal conduction Rectangular conduction Units
0.034 0.040 0.052 0.076 0.126 0.025 0.042 0.056 0.079 0.127 K/W
Conditions
TJ = TJ max.
Ordering Information Table
Device Code
ST
1
10
2
3
3
S
4
08
5
P
6
F
7
N
8
0
9 10
1 2 3 4 5 6 7 8 9
- Thyristor - Essential part number - 3 = Fast turn off - S = Compression bonding Stud - Voltage code: Code x 100 = VRRM (See Voltage Ratings table) - P = Stud Base 1/2" 20UNF - Reapplied dv/dt code (for tq test condition) - tq code dv/dt - tq combinations available
200 FN * FM FL * FP FK -400 -HM HL HP HK HJ dv/dt (V/s) 20 50 100 10 CN DN EN - 0 = Eyelet terminals (Gate and Aux. Cathode Leads) 12 CM DM EM 1 = Fast-on terminals (Gate and Aux. Cathode Leads) 15 CL DL EL tq(s) 18 CP DP EP 2 = Flag terminals (For Cathode and Gate Terminals) 20 CK DK EK - Critical dv/dt: 25 ---None = 500V/sec (Standard value) *Standard part number. All other types available only on request.
10
L
= 1000V/sec (Special selection)
4
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ST103S Series
Bulletin I25183 rev. B 03/94
Outline Table
CERAMIC HOUSING
16.5 (0.65) MAX. 2.6 (0.10) MAX. 4.3 (0.17) DIA
9.5 20 (0. (0. 37 79) )M MI IN . N.
8.5 (0.33) DIA.
FLEXIBLE LEAD C.S. 16mm 2 (.025 s.i.)
RED SILICON RUBBER 157 (6.18) 170 (6.69) RED CATHODE
C.S. 0.4 mm 2 (.0006 s.i.)
Fast-on Terminals
WHITE GATE
AMP. 280000-1 REF-250
10 (0.39)
215 (8.46) 70 (2.75) MIN. RED SHRINK 29 (1.14) MAX. WHITE SHRINK
12. 5 (0.49) MAX.
22.5 (0.88) MAX. DIA.
21 (0.83)
MAX.
SW 27 1/2"-20UNF-2A
Case Style TO-209AC (TO-94)
29.5 (1.16) MAX.
All dimensions in millimeters (inches)
CERAMIC HOUSING FLAG TERMINALS
22.5 DIA. (0.89) MAX. 1.5 (0.06) DIA. 10 (0.39) 5.2 (0.20) DIA.
46 (1.81)
49 (1.93)
7.5 (0.30)
1 2.5 (0.49)
21(0.83 )
MAX.
Case Style TO-208AD (TO-83)
All dimensions in millimeters (inches)
MAX .
1/2"-20UNF-2A
SW 27
29 (1.14) MAX.
2.4 (0.09) 29.5 (1.16)
(0.6 5)
16.5
10 (0.39)
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5
ST103S Series
Bulletin I25183 rev. B 03/94
Maximum Allowable Case Temperature (C)
Maximum Allowable Case Temperat ure (C) 130 ST103S Series R thJC (DC) = 0.195 K/W 120
130 120 110
ST103S Series R thJC (DC) = 0.195 K/W
110
Conduction Angle
Conduction Period
100 90 80 30 70 0 20 40 60 80 100 120 140 160 180 Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
100
90 30 80 0
60
90 60 120 180 DC
90
120 180
10 20 30 40 50 60 70 80 90 100 110 Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Maximum Average On-state Power Loss (W)
180
S R th
2 0.
160
140
120 100 80 60 40 20 0
180 120 90 60 30 RMS Limit
W K/
3 0.
0. 4
A
=0
W K/
0 .5
K/ W
.1 W K/
K/
W
elt -D a
0.8 K/ W
1. 2 K /W
R
Conduction Angle
ST103S Series TJ = 125C
0 10 20 30 40 50 60 70 80 90 100110 25
50
75
100
125
Average On-state Current (A)
Maximum Allowable Ambient Temperature (C)
Fig. 3 - On-state Power Loss Characteristics
Maximum Average On-st ate Power Loss (W)
260 240
220 200 180 160 140
120
DC 180 120 90 60 30
R
SA th
=
0. 2
1 0. W K/
K/ W
0 .3
0 .4
0.5
-D
K/
el
W
ta R
K/ W
K/ W
100 RMS Limit 80 60 40 20
0
Conduction Period
0 .8
K /W
/W
1 .2 K
ST103S Series TJ = 125C
0
20
40
60
80 100 120 140 160 180 25
50
75
100
125
Average On-state Current (A)
Maximum Allowable Ambient Temperature (C)
Fig. 4 - On-state Power Loss Characteristics
6
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ST103S Series
Bulletin I25183 rev. B 03/94
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
2800 2600 2400 2200 2000 1800 1600 1400 1200 1
At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s
3000 2800
Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125C 2600 No Voltage Reapplied 2400 Rated VRRMReapplied 2200 2000 1800 1600 1400 ST103S Series 0.1 Pulse Train Duration (s)
Fig. 6 - Maximum Non-repetitive Surge Current
ST103S Series
10
100
1200 0.01
1
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-repetitive Surge Current
Transient Thermal Impedance Z thJC (K/W)
10000 Instantaneous On-state Current (A)
1 Steady State Value R thJ C = 0.195 K/W (DC Operation)
TJ = 25C TJ = 125C 1000
0.1
ST103S Series
ST103S Series
100 1 2 3 4 5 6 Instantaneous On-state Voltage (V)
Fig. 7 - On-state Voltage Drop Characteristics
0.01 0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristic
Maximum Reverse Recovery Charge - Qrr (C)
Maximum Reverse Recovery Current - Irr (A)
160 140 120
200 A
120 110 100 90 80 70 60 50 40 30 20 10 10 20 30 40 50
ST103S Series TJ = 125 C
I TM = 500 A 300 A
I TM = 500 A 300 A 200 A 100 A 50 A
100
100 A
80 60
50 A
40 20 10
ST103S Series TJ = 125 C
20
30
40
50
60
70
80
90 100
60
70
80
90 100
Rate Of Fall Of On-state Current - di/dt (A/s)
Fig. 9 - Reverse Recovered Charge Characteristics
Rate Of Fall Of Forward Current - di/dt (A/s)
Fig. 10 - Reverse Recovery Current Characteristics
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ST103S Series
Bulletin I25183 rev. B 03/94
1E4
Snubber circuit R s = 22 ohms Cs = 0.15 F V D = 80% V DRM
ST103S Series Sinusoidal pulse TC = 85C Snubber circuit R s = 22 ohms C s = 0.15 F V D = 80% VDRM
Peak On-state Current (A)
tp
1E3
10000 5000 2500
1000
400
200 100
50 Hz
10000 5000 2500 1000 200 100 50 Hz
400
tp
ST103S Series Sinusoidal pulse TC = 60C
1E2 1E1
1E2
1E3
1E4 1E1 1E4 1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Fig. 11 - Frequency Characteristics
Pulse Basewidth (s)
1E4
Snubber circuit R s = 22 ohms C s = 0.15 F V D = 80% VDRM ST103S Series Trapezoidal pulse TC = 60C di/dt = 50A/s
Snubber circuit R s = 22 ohms C s = 0.15 F V D = 80% VDRM ST103S Series Trapezoidal pulse TC = 85C di/dt = 50A/s
Peak On-state Current (A)
tp
1E3
5000 2500 1500 1000
400
200
100
50 Hz
5000 2500 1500 1000 400
200
100
50 Hz
1E2 1E1
1E2
1E3
1E4 1E1 1E4 1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Fig. 12 - Frequency Characteristics
Pulse Basewidth (s)
1E4
Snubber circuit R s = 22 ohms C s = 0.15 F V D = 80% VDRM ST103S Series Trapezoidal pulse TC = 60C di/dt = 100A/s
Snubber circuit R s = 22 ohms C s = 0.15 F V D = 80% VDRM ST103S Series Trapezoidal pulse TC = 85C di/dt = 100A/s
Peak On-state Current (A)
tp
tp
1E3
5000 10000 2500 1500 1000
400
200
100
50 Hz
10000 5000 2500 1500 1000
400
200
100
50 Hz
1E2 1E1
1E2
1E3
1E4 1E1 1E4 1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Fig. 13 - Frequency Characteristics
Pulse Basewidth (s)
8
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ST103S Series
Bulletin I25183 rev. B 03/94
1E5
ST103S Series Rectangular pulse
Peak On-state Current (A)
tp
di/dt = 50A/s
1E4
35 10 20 jo ules per pulse
2 3 5 10 20 joules per pulse
1E3
0.1
0.2
0.5
1
2
1 0.5 0.2 0.1
1E2
tp ST103S Series Sinusoidal pulse
1E1 1E1
1E2
1E3
1E4 1E1 1E4 1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Pulse Basewidth (s)
Fig. 14 - Maximum On-state Energy Power Loss Characteristics
100 Instantaneous Gate Voltage (V) Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 s b) Recommended load line for <=30% rated di/dt : 10V, 10ohms 10 tr<=1 s (b)
Tj=-40 C Tj=25 C Tj=125 C
(1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, (a)
tp = 20ms tp = 10ms tp = 5ms tp = 3.3ms
1 VGD IGD 0.1 0.001 0.01
(1)
(2)
(3) (4)
Device: ST103S Series 0.1 1
Frequency Limited by PG(AV) 10 100
Instantaneous Gate Current (A)
Fig. 15 - Gate Characteristics
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